Abstract
Transmission electron microscopy (TEM) has been used to study inclusions and defects in a synthetic diamond single crystal grown from Fe–Ni–C system under high temperature–high pressure. The (FeNi) 23C 6 and SiC inclusions trapped in the diamond were identified. The stacking fault, twin and prismatic dislocation in the diamond were directly observed. The formation mechanisms of the inclusions and defects were analyzed.
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