Some general experimental studies on charge-coupled device circuits†

Abstract

Abstract The first part, of the paper includes the derivation of a lump model for the basic CCD unit. This model consists of two capacitors, a current generator and a switch. Experimental results are given for the justification of this model. In the second part of the paper a report is given on the successful operation of silicon gate CCD shift registers, two-phase and three-phase. The last part presents photosensitivity results of CCD silicon gate shift registers operated as imaging arrays. The noise equivalent power (NEP) was 2 × 10−8 W/cm2 at a wavelength of 0·7 μm. Relative output as a function of integration time is also given.