Abstract
Electrical properties of vacuum-evaporated SiO/GeO2 thin films are investigated. Voltage-current characteristics during and after electroforming have been studied for different samples having dielectric thicknesses from 35–250 nm. The electro-formed devices exhibit electron emission in vacuum and the circulating current peaks in the Vb - Ic characteristics of formed devices have been observed to change in position and magnitude with the change in ambient pressure. The results are discussed in the light of the filamentary conduction model.
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