Some effects of planar defects near the Si/SiO2 interface on electrical properties of silicon-on-sapphire/MOS devices

Abstract

Data are presented which show some primary effects of widely different planar defect densities (at the top surfaces of the films) on the electrical properties of silicon-on-sapphire/MOS devices. These electrical properties are directly related to the microstructure of the films using transmission electron microscope methods. Both surface mobility and effective surface threshold potential are found to depend strongly on the surface defect density. Specimens having surface densities of 3×104 and 4×105 cm−1 were examined.