Abstract
AbstractWe present experimental results of electronic structure investigations of SnO2 films by X‐ray emission spectroscopy and X‐ray photoelectron spectroscopy methods wherein X‐ray O Kα emission spectra for these materials are reported for the first time. The O 2p electron band shifts toward the upper edge of the valence band when oxygen vacancies increase, but, at the same time, the distance on the binding energy scale from the O 2p band centroid to the Fermi level remains constant. The O 2p valence electron band is broader on the higher binding energy side for oxides having more oxygen vacancies.
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