Abstract
The characteristics of Si-doped In 0.52Al 0.48As layers as a function of the silicon doping are analyzed by low-temperature photoluminescence (PL), Raman spectroscopy and Hall effect measurements. Analysis of the PL intensity at increasing silicon doping levels showed a temperature dependence which is characteristic of disordered and amorphous materials, suggesting a behaviour which has the characteristic of disordered materials at higher doping levels. The PL linewidth broadens at higher silicon doping levels while the Raman scattering spectra showed a reduction in both the AlAs-like and InAs-like longitudinal-optic (LO) phonon frequencies coupled with a broadening of the LO phonon line shape as the doping level is increased.
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