Abstract
Thin-film Schottky diodes are one of the key elements in large-area flexible electronics. In such devices, a highly uniform semiconductor film is vital for the device performance. Here, we propose a novel solution-based anodization method to form a conformal oxide semiconductor layer for Schottky diodes. The thickness of the anodized TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer varied from 12 to 22.5 nm. The optimized Pt/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ti Schottky diode demonstrated a large barrier height of 1.19 eV, an ON/OFF ratio as high as 3.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> at ± 2 V, and an ideality factor of 1.5. The average breakdown electric field was 5.5 MV/cm, which is higher than typical values of conventional solution processed TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . The diode with a 15-nm-thickTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer also showed good rectification properties up to 0.7 MHz.
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