Abstract

Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD) epitaxy are reported for high-power devices. The field plate Schottky barrier diode (SBD) showed a differential specific on-resistance (Ron,sp) of 0.67 mΩ-cm2 and an average breakdown electric field of 2.28 MV/cm. To the best of our knowledge, this Ron,sp is the lowest among the available vertical β-Ga2O3 SBD reports, and contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. Moreover, the average electric field of 2.28 MV/cm is higher compared to most of the vertical β-Ga2O3 punch-through SBDs. These results suggest that the high-quality MOCVD β-Ga2O3 can be promising for high-power devices.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.