Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide

Abstract

In this letter, physically transient resistive memory devices based on solution-processed MgO films were demonstrated for the first time. Stable and reproducible resistive switching memory performances were achieved with Mg/solution-processed MgO/W devices, which have larger OFF/ON resistance ratio (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> ) than the Mg/sputtered MgO/W devices. Triggered failures can be achieved by immersing the transient devices in deionized water for 6 min at room temperature. In addition, flexible and transient memory devices were accomplished by water-assisted transfer printing method and no significant degradation is observed under a bending radius of 3 mm. The solution-processed MgO-based dissolvable devices demonstrate great potential in low-cost transient electronics, flexible memory systems, secure electronics, and biocompatible devices.