Flexible and Fatigue‐Resistant Ternary Electrical Memory Based on Alternative Copolysiloxane with Carbazole Donors and Imidazole‐Modified Naphthalimide Acceptors

Abstract

AbstractAlternative copolysiloxane P(INDISi‐alt‐CzSi) containing the pendants of carbazole donors and imidazole‐modified naphthalimide acceptors is successfully prepared. Then, a flexible electrical resistive memory device based on P(INDISi‐alt‐CzSi) is fabricated with sandwich architecture Al/P(INDISi‐alt‐CzSi)/ITO/PET. The fabricated memory device displays typical nonvolatile ternary write‐once‐read‐many times memory characteristics. Moreover, the prepared flexible memories display high ON/OFF ratio of ≈105, rapid response of ≈120 ns, multistate storage, and high stability. Furthermore, the flexible memory device can still maintain good ternary memory characteristics after bending for 500 cycles or aging for 48 h at 90 °C, indicating good fatigue‐resistant performance. Both the good flexibility and high fatigue‐resistant performance of the flexible memories further promise the long‐term applications.