Abstract
AbstractAlternative copolysiloxane P(INDISi‐alt‐CzSi) containing the pendants of carbazole donors and imidazole‐modified naphthalimide acceptors is successfully prepared. Then, a flexible electrical resistive memory device based on P(INDISi‐alt‐CzSi) is fabricated with sandwich architecture Al/P(INDISi‐alt‐CzSi)/ITO/PET. The fabricated memory device displays typical nonvolatile ternary write‐once‐read‐many times memory characteristics. Moreover, the prepared flexible memories display high ON/OFF ratio of ≈105, rapid response of ≈120 ns, multistate storage, and high stability. Furthermore, the flexible memory device can still maintain good ternary memory characteristics after bending for 500 cycles or aging for 48 h at 90 °C, indicating good fatigue‐resistant performance. Both the good flexibility and high fatigue‐resistant performance of the flexible memories further promise the long‐term applications.
Published Version
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