Solution-Processed Light-Emitting Dielectric Films and Their Applications in Transistors

Abstract

Organic field-effect transistors (OFETs) with light emission capability have attracted attention with the development of multifunctional devices.1,2 In order to achieve tunable area emission, we employed light-emitting ionic iridium complex (Ir(ppy)2pyim)PF6, as the dielectric material. Results demonstrated that when mixed with some polymer, such as polymethyl methacrylate (PMMA), the complex could form gate dielectric films for light emitting OFETs. At low drain voltage, the FETs behaved as a normal transistor and, at high drain voltage, a controllable area light emission could be successfully achieved. The brightness could be tuned by the potential differences between three electrodes (gate, source and drain electrodes).Our study verified that ionic light-emitting complexes have potential to be used in tunable area-emitting electronic devices.