Abstract

We discuss the synthesis and deposition of thin films amorphous zinc oxide (a: ZnO) by custom-designed spray pyrolysis unit for Thin Film Transistor (TFT) application. Top gate top contact TFT is fabricated on a glass substrate which consists of a: ZnO as a channel layer, PVA as gate dielectrics material and Al as electrodes. Electrical properties of a: ZnO TFT (W/L= 500/200µm) were probed. The individual transistor with a threshold voltage (Vth=2.1 V), off/on current (Ioff = order of 10−8A; Ion = order of 10−3A) and Ion /Ioff ratio (order of 105), subthreshold swing (0.5 V/decade) and linear mobility (μLin= 5 cm-2/Vs). The inverter circuit is the basic building block of any digital circuit. The fabricated inverter is subjected to the logic operation in the range of 0 to 5V and the result confirmed inverter operation characteristics.

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