Abstract
The Ga-assisted formation of Ge nanorods and nanowires in solution has been demonstrated and a catalytic activity of the Ga seeds was observed. The synthesis of anisotropic single-crystalline Ge nanostructures was achieved at temperatures as low as 170 °C. Gallium not only serves as nucleation seed but is also incorporated in the Ge nanowires in higher concentrations than its thermodynamic solubility limit.Graphical abstract
Highlights
Ge nanowires (NWs) and nanorods (NRs) have been successfully prepared by different methods and conditions in bottom–up and top–down approaches [1]
The structures are all growth has been achieved at temperatures as low as 180 °C; the data on the Ge NWs prepared at low temperature are scarce [11]
According to the binary Ge-Ga phase diagram, the Ga/Ge eutectic is very close to the melting point of gallium (29.8 °C), Fig. 1 a SEM image of Ga-seeded Ge NRs with an STEM-EDX image showing the Ga growth seed and b the corresponding X-ray diffraction (XRD) pattern revealing the high crystallinity of the Ge NRs and the absence of Ga reflections due to its low melting point
Summary
Ge nanowires (NWs) and nanorods (NRs) have been successfully prepared by different methods and conditions in bottom–up and top–down approaches [1]. The here presented study illustrates that Ga can be an efficient metal growth seed for single-crystalline, anisotropic Ge nanostructures at temperatures as low as 170 °C.
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