Abstract
Transparent conducting (TC) donor-doped In2O3 thin films are the critical components in photovoltaic, display and solid-state lighting fields. In2O3-based TC films with high carrier mobility are required for reducing the power consumption of devices. Meanwhile, a high near-infrared (NIR) transparency can significantly improve the power conversion efficiency in solar cells. Here, W-doped In2O3 thin films with high carrier mobility and NIR transparency were obtained through a facile solution process, which is suitable for large-scale thin film fabrication. The effects of W concentration (0.3 at% to 0.7 at%) on the microstructures, electrical and optical properties of In2O3 thin films are investigated in detail. It is found that the 0.5% W-doped In2O3 thin film exhibits high carrier mobility of 23 cm2 V−1 s−1 at a carrier concentration of 5.02 × 1020 cm−3, showing a high NIR transmittance over 82% and low sheet resistance of 32 Ω/sq. The solution processed W-doped In2O3 thin films with low sheet resistance and high NIR transparency can be potentially used as transparent electrodes for solar cells.
Published Version
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