Abstract
Organic memristors are considered to be the next-generation storage element due to their unique advantages of flexibility, transparency, and good solution processability. In this Letter, a Zn-porphyrin based small-molecular organic memristor is prepared by spin-coating with an ultralow resistive switching set voltage of 0.38 V. It is found that the zinc atom in the porphyrin molecule plays a very important role in improving the resistance switching characteristics of organic memristors. By tracking the change in oxygen valence in the vertical dimension, we demonstrate that Zn atom located in the core of porphyrin helps to enhance the oxygen ion migration across the active layer, clearly revealing the memory mechanism of low-cost solution-processed Zn-porphyrin based small-molecular organic memristors. This organic memristor shows excellent memristive performance resulting from rational material design and appropriate device structure engineering.
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