Solution Processed Organic Thin-Film Transistors With Hybrid Low/High Voltage Operation

Abstract

Solution processed bottom-gate bottom-contact organic thin-film transistors (OTFTs) being able to sustain hybrid low/high voltage operation were realized with the maximum processing temperature not exceeding 100 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C. In the devices, a channel engineering approach is used to achieve low voltage operation, by inducing phase separation with the blend of 6, 13-bis(triisopropylsilylethynyl)-pentacene and polystyrene to form an ultra-thin high crystalline channel. Since the approach doesn't rely on enlarging the gate dielectric capacitance, the low voltage OTFT with a relatively thick dielectric layer was shown to be able to sustain high voltage operation. Moreover, the ultra-small dielectric capacitance can help to reduce the parasitic capacitance in the data and scan lines of the display panel. The device technology is shown to be promising for developing flexible/rollable display systems on plastic substrates, where a relatively high voltage is required for the pixel driving circuits, and a low voltage is preferred for the logic circuits in the peripheral drivers.