Solution-processed organic–inorganic hybrid CMOS inverter exhibiting a high gain reaching 890

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In this letter, we present a fabrication scheme and device performances of an organic–inorganic hybrid CMOS inverter employing a high-performance p-type organic semiconductor and an amorphous metal oxide layers. A deterioration of the oxide layer during device processing, which is often found in solution-processed semiconductor oxides, can be avoided by a one-shot solution-crystallization technique utilizing a polymer-blend. Both the p- and the n-type channels exhibited excellent transistor performances with high carrier mobilities and with precipitous turn-on behaviors near the gate voltages of 0 V, resulting in a successful demonstration of an ideal CMOS inverter operation with gain of 890. This result will update a potential excellence of organic–inorganic hybrid CMOS circuits in practical devices.