Abstract
In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d < 10 nm) tantalum oxide films were obtained using solution-based anodic oxidation (anodization) of Ta in citric acid. The devices were tested using standard ReRAM characterization tests from ±0.5 V to ±5 V and showed a promising memristive behavior. The memristive switches show an almost 80-times change in resistance between the ON and OFF states.
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