Solution-Processed High Performance Ytterbium-Doped In2O3 Thin Film Transistor and Its Application in Common-Source Amplifier

Abstract

In this article, we investigated Ytterbium (Yb)-doped Indium-oxide (In2O3)-based thin-film transistor (TFT) prepared by the solution-processed. Indium-Yb-oxide (InYbO) films with different Yb-doping concentrations were prepared by the solution-processed to reveal the variation of physical properties of In2O3 films with the changing of Yb-doping concentration. The results show that Yb-doping can improve the microstructure and surface roughness of In2O3 films and suppress the oxygen vacancy defects. When the Yb-doping concentration reaches 1 mol%, the InYbO-TFT exhibits optimal electrical performance. In addition, the performance of InYbO-TFT under positive bias stability (PBS) test is also significantly improved. The device with 1 mol% Yb concentration shows a voltage shift of 1.27 V after 3600 s of +20 V bias test, which is about <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$5\times $ </tex-math></inline-formula> stable than the In2O3-TFT. Eventually, based on this InYbO-TFT, a common-source amplifier was designed. This amplifier has a 16.03 dB Gain and a cut-off frequency of 470 Hz with excellent response speed, which shows great application potential.