Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

Abstract

At low temperatures about 230 °C, bilayer InGaZnO/In2O3 thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In2O3 bilayer TFTs with SiO2 as dielectric layer show high electrical performances, such as a mobility of 7.63 cm2V−1s−1, a threshold voltage (V th) of 3.8 V, and an on/off ratio higher than 107, which are superior to single-layer InGaZnO TFTs or In2O3 TFTs. Moreover, bilayer InGaZnO/In2O3 TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In2O3 layer. By using high dielectric constant AlO x film, the InGaZnO/In2O3 TFTs exhibit an improved mobility of 47.7 cm2V−1s−1. The excellent electrical performance of the solution-based InGaZnO/In2O3 TFTs shows great application potential for low-cost flexible printed electronics.