Abstract
We examined vanadium-incorporated zinc tin oxide (VZTO) thin film transistors (TFTs) with various V contents and found that VZTO films easily become semi-insulators, even at small V contents (≥1.7 at%). We also fabricated VZTO/ZTO bi-layer TFTs with various VZTO top-layer thicknesses and investigated their electrical performance and stability. Regardless of the VZTO top-layer thickness, the VZTO/ZTO TFTs exhibited the transfer characteristics of a typical TFT because VZTO top-layers had semiconducting properties, unlike single VZTO films. As compared to the reference ZTO TFT, the stability of all the bi-layer TFTs under bias and/or illumination stress was significantly improved.
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