Abstract
We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
Paper version not known (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call