Abstract
We studied numerically the fluid dynamics of the silicon melt in the high temperature solution growth of silicon carbide (SiC) with the presence of alternative magnetic fields. A 2D-axisymmetric model for 2in SiC crystal growth was used for this study. The results revealed that the melt convection is strongly affected by the coil position and the applied frequency. Results on the effect of electromagnetic convection in the presence of buoyancy convection are also given in this paper.
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