Abstract
The influence of the point defect flux on the annealing of ion-implanted amorphous silicon on a Si (100) crystal substrate has been studied. In the first case the point defect flux was created by emission of defects from an Ar + -implanted damaged layer on the back side of the silicon wafer and in the other case it was done by means of defect migration at the interface of annealing-grown chromium silicide on the back side of the wafer. It is shown that the interstitial flux has no appreciable effect on epitaxial crystallization and layer-by-layer amorphization but it affects lattice rearrangements in the amorphous layer responsible for the changes of the electrical properties of the layer.
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