Abstract
The generation of crystallographic defects induced by metallic impurities diffusing from the back side of silicon wafers is observed during rapid thermal annealing. The type of defect generated depends on both the type and concentration of metal used. Saucer‐pits, hillocks, and oxidation induced stacking faults are observed after oxidation in the time range 40–180s. These defects can be annihilated by gettering with a heavily doped P layer diffused into the back side of the wafers. The effectiveness of this annihilation depends upon the order of the gettering and defect‐generating processes. It also depends on the type and concentration of metal used.
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