Abstract
The low-gravity environment aboard the space provides a unique platform for understanding crystal-growth-related phenomena that are masked by gravity on the Earth and for exploring new crystal growth techniques. We have characterized the wetting behavior of metal alloys and carried out melt growth of compound semiconductors under the support of materials science program in the SJ-10 recoverable satellite. We found that interfacial reaction plays a significant role in the interfacial evolution of Sn-based alloys. Detached growth of InAsSb was realized under microgravity, whereas during the terrestrial experiment the crystal and the crucible wall contact with each other. Moreover, the suppression of buoyancy-driven convection results in a more uniform composition distribution in the InGaSb and Bi<sub>2</sub>Te<sub>3</sub>-based semiconductor alloys.
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