Abstract
Large-diameter, high-quality Si wafers are required to further the advancement of ultra-large-scale-integrated circuit (ULSI) device processing. Therefore, new crystal growth technique is needed to obtain large-diameter, high-quality Si crystals containing homogeneously distributed oxygen in the concentration required for ULSI device processing. To address this requirement, we developed a new crystal growth technique using electromagnetic force, which we call the electromagnetic Czochralski (EMCZ) method. Using the EMCZ method, we were able to precisely control oxygen concentration and distribution in commercial-size (200 mm diameter) Si crystals. This report describes how the use of the EMCZ method can be advantageous in controlling oxygen concentration in large-diameter Si crystals as well.
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