Abstract
Abstract A method for the amplification of microwaves, based on the space-charge interaction of electron streaming sheets with different velocities in a semiconductor, is described. An n+-n-n+ GaAs diode is used to generate these electron streams. We considered here electron-charged sheets, each of which has a different average velocity due to the doping concentration gradient along the thickness direction in the semiconductor. A dispersion relation is obtained for space-charge waves in the semiconductor, and a numerical analysis is used to calculate the propagation constant γ.The possibility of a growing wave is examined and it is found that a maximum 18 dB gain in the 3-90 GHz band can be achieved.
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