Abstract
We investigated the growth of germanium arsenide (GeAs) films and performed typical semiconducting evaluations. The shapes of the GeAs films were observed to be a rectangular, reflecting the monoclinic crystal phase along the [010] and [201] axes (zigzag and armchair sides). The in-plane crystal orientation of the rectangular films could be revealed by analyzing the peak intensities of many active Raman modes depending on the rotation angle. The electronic transport characteristics was indicated the in-plane anisotropy of the resistivities. In addition, space-charge-limited conduction was achieved at a higher bias regime. Room-temperature photoluminescence was observed at a peak energy of 2.12 eV, suggesting a direct transition near band edge of the monolayer film.
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