Abstract
AbstractThe research of semiconductors displaying ferromagnetic properties at room temperature has attracted more and more attention to investigations of doped AIIBVI, AIIIBV and A2IIIB3VI binary semiconductors (CdMnTe, GaMnAs, In2S3:Mn etc.) with Mn [1, 2]. During the last few years growing interest has been shown to spintronics or electronics using spin effects due to its potential applicability to new functional devices combining both transport and magnetic properties and possibility to work at room temperature [3]. A number of exciting new properties such as spin injection, carrier‐induced and optically controlled ferromagnetism have been discovered in III‐V‐based diluted semiconductors [4, 5]. Doping of In2S3 with ferromagnetic atoms of Mn shall lead to a change of existing and appearance of new unique physical properties in this compound, combining both semiconductor and magnetic properties. Results of study of In2S3‐MnIn2S4 system have been presented in the given work for the first time. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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