Abstract
Abstract The solid solubility of Zn in Si has been extended by nearly two decades to include the temperature range from 800° to 1000°C. The data of the present work near 1050°C are consistent with previously published values of solubility. Freeze-out of carriers in both the 0·55 eV and the 0·31 eV acceptor levels has been observed and employed to obtain the Zn impurity solubility. Measurements of the impurity-compensated resistivity and the concentration of Zn atoms agree well with theoretical predictions based on the charge balance equation and the known double acceptor behavior of Zn in Si.
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