Abstract
The solid solubility of Zn in Si has been extended by nearly two decades to include the temperature range from 800° to 1000°C. The data of the present work near 1050°C are consistent with previously published values of solubility. Freeze-out of carriers in both the 0·55 eV and the 0·31 eV acceptor levels has been observed and employed to obtain the Zn impurity solubility. Measurements of the impurity-compensated resistivity and the concentration of Zn atoms agree well with theoretical predictions based on the charge balance equation and the known double acceptor behavior of Zn in Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
