Abstract
Orthorhombic β-FeSi2 is a semiconducting material with a direct band gap of about 0.87 eV, which makes it an active component in light detectors and near-infrared sources. Solid phase epitaxy (SPE) has been used as the conventional method to grow epitaxial β-FeSi2 films. In this article, we report on the SPE of β-FeSi2 films using Fe/Si(100) heterostructures obtained by metalorganic chemical vapor deposition (MOCVD). The formation processing of the β-FeSi2 thin films includes the deposition of iron on Si(100) by MOCVD and a subsequent annealing. The highly textured Fe layer deposited on the silicon substrate was tested by x-ray diffraction (XRD) and electron microscopy techniques. The β-FeSi2 film was successfully formed after the annealing process. The better epitaxy of β-FeSi2 on Si(100) was evidenced by XRD measurements. It was also confirmed by Raman spectra measurements, in which some main Raman lines were clearly detected. Optical transmission measurements revealed a strong absorption of β-FeSi2 near 0.87 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
