Abstract
The effects of the growth temperature and the total hydrogen flow rate on the solid composition and the growth rate in the MOCVD growth of Ga1-xAlxAs were investigated in detail. It was found that (1) the rate of incorporation of Ga atoms decreased with increasing growth temperature, while that of Al atoms increased up to 780°C and decreased beyond 780°C; (2) an increase in the total gas flow rate had the effect of reducing the boundary layer thickness and lowering the surface temperature of the wafer; and (3) there was no interaction between Ga and Al atoms in the growth of Ga1-xAlxAs. The detailed experimental results are described in this paper.
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