Abstract
One of the most important problems is how to form an excellent interface between the insulator and the C60 layers in the C60 field-effect doping technique. In this paper, we propose a new structure of the C60 field-effect transistor which consists of an epitaxial AlN layer as the insulator and a C60 epitaxial layer grown on an AlN (0001) surface. We have mainly investigated solid C60 growth on the AlN (0001) surface by the MBE technique in the present work. C60 grains with face centred cubic structure have been obtained on a smooth AlN surface. Four types of the C60 grains were obtained, that is, the 0° orientation and its twin grains and the 30° orientation and its twin grains. We have found that the 0° orientation grains only can be obtained by controlling the growth temperature. The results strongly indicate that an excellent interface between the AlN insulator and the C60 layer can be formed for device applications. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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