Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth

Abstract

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT thin films on pure Pt coated Si (100) substrates showed (100) and (110) orientations with 100 to 80 intensity while these films on the same substrate with an intermediate PT buffer layer showed preferred (100) orientation. The intermediate buffer layer seems to promote epitaxial growth. Increase in thickness of the intermediate buffer layer resulted in lowering of rcmanent polarization and an increase of coercive field parameters.