Abstract
β gallium oxide (β-Ga2O3) is a promising material for the detection of solar-blind ultraviolet (SBUV). The quality of β-Ga2O3 crystal has a crucial influence on the performance of the photodetectors (PDs). In this paper, SBUV PDs were fabricated on high quality homoepitaxial β-Ga2O3 films grown by metal organic chemical vapor deposition (MOCVD). Both photoconductor PD and Schottky barrier diode (SBD) PD were prepared. The PDs showed excellent performance. For the photoconductor PD, the responsivity and EQE under the illumination of 254 nm light at 20 V bias were respectively 1.08 A/W and 5.32 × 102%. For the SBD PD, the I254/Idark at −20 V was 320, and the corresponding rejection ratio I254/I365 was 42.
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