Abstract
The dependence of the photocurrent of n +p crystalline and pin amorphous silicon cells on the angle of incident radiation has been investigated theoretically and experimentally. It is found that for angles larger than about 30° from the normal to the surface the photocurrent is significantly smaller than expected from the cosine law. It is shown that the deviation is mainly due to increased reflection losses, the contribution from the increase in the effective junction depth being small.
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