Sol–gel derived Ag-doped ZnO thin film for UV photodetector with enhanced response

Abstract

Ultraviolet (UV) photodetectors based on pure zinc oxide (ZnO) and Ag-doped ZnO (Ag:ZnO) thin films with different Ag doping contents (0.05, 0.15, 0.65, 1.30 and 2.20 %) have been prepared by sol–gel technique. Photoresponse characteristics of the prepared detectors have been studied for UV radiation of λ = 365 nm and intensity = 24 μW/cm2. The Ag:ZnO thin film-based photodetector having an optimum amount of 0.15 at. wt% Ag dopant exhibits a high photoconductive gain (K = 1.32 × 103) with relatively fast recovery (T 37 % = 600 ms) and minimal persistence in comparison to other prepared photodetectors. The incorporation of Ag dopant (≤0.15 %) at Zn lattice sites (Agzn) in ZnO creates acceptor levels in the forbidden gap, thereby reducing the value of dark current. Upon illumination with UV radiation, the photogenerated holes recombine with the captured electrons at the Agzn sites. The photogenerated electrons increase the concentration of conduction electrons, thereby giving an enhanced photoresponse for Ag:ZnO photodetector (0.15 % Ag). At higher dopant concentration (≥0.65 %), Ag incorporated at the interstitial sites of ZnO leads to the formation of deep energy levels below the conduction band along with increase in oxygen-related defects, thereby giving higher values of dark current. The incorporation of Ag at interstitial sites results in degradation of photoresponse along with the appearance of persistence in recovery of the photodetector in the absence of UV radiation.