Abstract
Indium tungsten oxide (In 6WO 12) powders and thin films were prepared from a 2,4-pentanedione solution containing In(NO 3)· xH 2O and WCl 6. X-ray diffraction results indicated that phase-pure In 6WO 12 powder formed after drying and heating the solution at 900 °C. Glancing X-ray diffraction results indicated that thin-film samples prepared on fused quartz substrates at 600 and 700 °C contained a disordered fluorite-related phase whereas those prepared at 800 °C contained the ordered compound—In 6WO 12. Films prepared at 900 °C reacted with the substrate to form In 2Si 2O 7. Despite the chemical and structural similarity of In 6WO 12 to several indium-containing fluorite-related oxides, including In 2O 3, In 3Sn 4O 12, and Ga 3− x In 5+ x Sn 2O 16, the resistivity of the films prepared in this study ranged from 70 to 720 Ω cm, which is several orders of magnitude higher than reported for the related oxides (approx. 10 −3 Ω cm). The band gaps of the films prepared at 600 and 700 °C were estimated from optical transmittance measurements to be 4.1 and 3.8 eV, respectively. Films prepared at 700 °C exhibited substantial coloration when exposed to n-butyl lithium whereas those prepared at 800 °C did not.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call