Abstract
The behavior of threshold voltage in a dual-gate SOI MOSFET is investigated theoretically. To this end, a boundary-value problem for Poisson's equation is solved numerically in the active silicon region. The major issue is the adjustment of front-gate threshold voltage by varying back-gate bias. This dependence is analyzed in the cases of back-surface accumulation, back-surface inversion, and full depletion. It is noted that the relation between the threshold voltage and the back-gate bias has nonlinear character due to the exponential growth in space charge as a function of surface potential under strong accumulation or inversion. It is established that the threshold-voltage adjustment is possible owing to charge coupling between the gates via the active region.
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