Abstract
A SOI MOSFET structure with a junction-type body contact [body-junctioned-to-gate (BJG)] is proposed to effectively suppress the parasitic bipolar effect in all kinds of MOSFETs including the pass transistor, which can be realized with compact design and simple processes. It utilizes the buried contact process to minimize the area consumption. Various on-chip test circuits have been fabricated to verify the BJG characteristics and it is shown that the proposed structure provides nearly perfect immunity against the circuit failure caused by the parasitic bipolar effect and an excellent speed performance, so that it can be a promising candidate for the SOI circuits.
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