Abstract
ABSTRACTIn this paper, we propose a dual-gate trench laterally diffused MOSFET (DGT-LDMOS) on silicon-on-insulator by utilizing trenches in the drift region. The proposed device has one horizontal-gate placed on the surface and another vertical-gate located in a trench. The dual-gate structure creates two channels in p-base which carry drain current in parallel. Another trench filled with oxide is placed in the drift region to enhance the reduced-surface-field effect. Based on two-dimensional simulations, it is demonstrated that an 80 V DGT-LDMOS can achieve 2.3 times higher drain current, 6.5 times reduction in specific on-resistance, 86% improvement in peak transconductance, 3 times increase in cut-off frequency, and 2.3 times improvement in maximum oscillation frequency with 3 times reduction in cell pitch when compared with 80 V conventional LDMOS.
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