Soft Error Sensitivity of Magnetic Random Access Memory and Its Radiation Hardening Design

Abstract

Spin-orbit torque magnetic random access memory (SOT-MRAM) has been considered as a candidate for the next-generation memory thanks to its ultrafast switching speed, zero static power consumption, and nearly unlimited endurance. However, the pulse width of writing current in the SOT-MRAM is comparable to that of radiation-induced current in spatial environments. Especially, the SOT-MRAM consists of nano-scale devices and may suffer from soft errors induced by multiple-bit upset (MBU). In this paper, we analyze the sensitivity to soft errors of SOT-MRAM. Then we review the radiation hardening technologies of MRAM and summary the highlighted issues, which will contribute to the integration of MRAM into aerospace and avionics electronics in hostile environments.