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Abstract
Tin sulfide (SnS) single crystal was successfully grown using the horizontal gradient freeze method. Characterization of the grown crystal revealed a single SnS phase and an orthorhombic structure with lattice parameters a=4.327, b=11.18, and c=3.981Å. Composition analysis revealed a stoichiometric composition equivalent to a congruent melt composition. The grown SnS crystal was confirmed to be single crystal by the X-ray Laue pattern. The melting point of the SnS was measured by differential thermal analysis and found to be 878°C. The grown crystal had p-type conductivity, a carrier concentration of 8×1017cm−3, electrical resistivity of 0.08Ωcm, and hole mobility perpendicular to the (010) direction of 98cm2/Vs at room temperature.
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