Abstract
Silver bismuth sulfide (AgBiS2) single crystal was successfully grown using the slow cooling method. Characterization of a grown crystal using power X-ray diffraction (XRD) revealed a single AgBiS2 phase and a cubic structure with lattice parameter a=5.641Å. The crystal was found to have a high-temperature phase with a cubic structure. XRD measurement and composition analysis showed that the stoichiometric composition of the AgBiS2 was equivalent to the congruent melt composition. The grown AgBiS2 crystal was confirmed to be single crystal by observing the Laue X-ray backscattering pattern. Differential thermal analysis showed that the melting point of the AgBiS2 was 805°C. The grown crystal had n-type conductivity, a carrier concentration of 2.6×1018cm−3, electrical resistivity of 2.1Ωcm, and hole mobility of 1.1cm2/Vs at room temperature.
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