Abstract
Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: <TEX>$7{\mu}s$</TEX> and rise time: <TEX>$13{\mu}s$</TEX>) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.
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