Abstract
The reproducible deposition of high temperature superconductors (HTC) on Silicon substrate is of central importance for taking full advantage of HTC passive interconnects between VLSI circuits. Up to now the main obstacle are the dramatic mismatch between processing temperature of HTC and the temperature allowed in standard VLSI silicon technology. Suppression of interdiffusion of HTC components and the Silicon substrate is one of the most challenging tasks. In situ deposition of HTC on bare silicon substrates leads to strong interdiffusion, deteriorating the superconducting properties of HTC. To solve this problem diffusion blocking barriers are investigated. We have checked the feasibility of Si 3N 4 and SiO 2 as barrier for the material-systems YBaCuO and BiSrCaCuO. Electrongas SNMS has been applied for chemical analysis of depth distribution of the different elemental species. Electrongas SNMS supplies high depth resolution and excellent sensitivity.
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