Abstract
A novel structure called the shorted-anode super-junction trench clustered insulated gate bipolar transistor (SA-SJ-TCIGBT) is proposed and demonstrated through numerical simulations in 1.2 kV, field-stop technology. This device is based on the SJ-TCIGBT concept. In the SA-SJ-TCIGBT structure, due to the introduction of a segmented n+-anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap back in the current–voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two-dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the SA structure during turn-off process.
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