Abstract
For the first time the zero voltage switching performance of a 1.2kV punch through clustered insulated gate bipolar transistor is reported. Experimental analysis under a zero voltage switching operating condition shows a reduction in `on' energy losses of 20% for all temperatures considered, even though significant transient over-voltages occur. This effect is not seen in the static IV characteristics and is shown to be as a result of a short p well-to-p well spacing
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